IRL530NSTRLPBF

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Infineon Technologies

MOSFET, N-CH, 100V, 17A, TO-263

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Infineon Technologies

MOSFET, N-CH, 100V, 17A, TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	IRL530NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	79 W, 3.8 W
Rds On (Max) @ Id, Vgs [Max]	100 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Vgs (Max)
Infineon Technologies IRL530NSTRLPBF	-55 °C	175 ░C	17 A	800 pF	4 V	10 V	100 mOhm	D2PAK	100 V	2 V	3.8 W 79 W	MOSFET (Metal Oxide)	N-Channel	34 nC	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V
Infineon Technologies IRL530NSTRRPBF	-55 °C	175 ░C	17 A	800 pF	4 V	10 V	100 mOhm	D2PAK	100 V	2 V	3.8 W 79 W	MOSFET (Metal Oxide)	N-Channel	34 nC	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK

Technical documentation and resources