MOSFET, N-CH, 100V, 17A, TO-263
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 17 A | 800 pF | 4 V | 10 V | 100 mOhm | D2PAK | 100 V | 2 V | 3.8 W 79 W | MOSFET (Metal Oxide) | N-Channel | 34 nC | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V |
Infineon Technologies | -55 °C | 175 ░C | 17 A | 800 pF | 4 V | 10 V | 100 mOhm | D2PAK | 100 V | 2 V | 3.8 W 79 W | MOSFET (Metal Oxide) | N-Channel | 34 nC | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V |