MCP6N11-010E/SN

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Microchip Technology

INSTRUMENT AMPLIFIER, 1 CHANNELS, 500 ΜV, 9 V/ΜS, 5 MHZ, 1.8V TO 5.5V, SOIC

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MCP6N11-010E/SN

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Microchip Technology

INSTRUMENT AMPLIFIER, 1 CHANNELS, 500 ΜV, 9 V/ΜS, 5 MHZ, 1.8V TO 5.5V, SOIC

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Description Specifications Series Pricing CAD Documents

Description

General part information

MCP6N11 Series

MCP6N11-010E/SN is an instrumentation amplifier with Enable/VOS Calibration pin (EN/active-low CAL) and several minimum gain. It is optimized for single-supply operation with rail-to-rail input (no common mode crossover distortion) and output performance. Two external resistors set the gain, minimizing gain error and drift-over temperature. The reference voltage (VREF) shifts the output voltage (VOUT). The supply voltage is low enough to support many portable applications. Typical applications include high side current sensor, wheatstone bridge sensors, difference amplifier with level shifting, power control loops.

Technical Specifications

Parameters and characteristics for this part

Specification	MCP6N11-010E/SN

Amplifier Type	Instrumentation
Current - Input Bias	10 pA
Current - Supply	800 µA
Gain Bandwidth Product	5 MHz
Mounting Type	Surface Mount
Number of Circuits	1
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Output Type	Rail-to-Rail
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Slew Rate	9 V/µs
Voltage - Input Offset	500 µV
Voltage - Supply Span (Max)	5.5 V
Voltage - Supply Span (Min)	1.8 V

MCP6N11 Series

Part	Operating Temperature (Max)	Operating Temperature (Min)	Current - Supply	Mounting Type	Slew Rate	Output Type	Voltage - Supply Span (Max)	Gain Bandwidth Product	Current - Input Bias	Voltage - Input Offset	Number of Circuits	Voltage - Supply Span (Min)	Package Name	Amplifier Type	Package Length	Package Width	Package / Case
Microchip Technology MCP6N11T-005E/SN	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	2.5 MHz	10 pA	850 µV	1	1.8 V	8-SOIC	Instrumentation	0.154 in	3.9 mm
Microchip Technology MCP6N11T-002E/SN	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	1 MHz	10 pA	2 mV	1	1.8 V	8-SOIC	Instrumentation	0.154 in	3.9 mm
Microchip Technology MCP6N11T-002E/MNY	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	1 MHz	10 pA	2 mV	1	1.8 V	8-TDFN	Instrumentation	2 mm	3 mm	8-WFDFN Exposed Pad
Microchip Technology MCP6N11T-010E/MNY	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	5 MHz	10 pA	500 µV	1	1.8 V	8-TDFN	Instrumentation	2 mm	3 mm	8-WFDFN Exposed Pad
Microchip Technology MCP6N11T-001E/MNY	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	500 kHz	10 pA	3 mV	1	1.8 V	8-TDFN	Instrumentation	2 mm	3 mm	8-WFDFN Exposed Pad
Microchip Technology MCP6N11T-100E/MNY	125 °C	-40 °C	800 µA	Surface Mount	6 V/µs	Rail-to-Rail	5.5 V	35 MHz	10 pA	350 µV	1	1.8 V	8-TDFN	Instrumentation	2 mm	3 mm	8-WFDFN Exposed Pad
Microchip Technology MCP6N11-010E/SN	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	5 MHz	10 pA	500 µV	1	1.8 V	8-SOIC	Instrumentation	0.154 in	3.9 mm
Microchip Technology MCP6N11-001E/SN	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	500 kHz	10 pA	3 mV	1	1.8 V	8-SOIC	Instrumentation	0.154 in	3.9 mm
Microchip Technology MCP6N11T-010E/SN	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	5 MHz	10 pA	500 µV	1	1.8 V	8-SOIC	Instrumentation	0.154 in	3.9 mm
Microchip Technology MCP6N11-002E/SN	125 °C	-40 °C	800 µA	Surface Mount	9 V/µs	Rail-to-Rail	5.5 V	1 MHz	10 pA	2 mV	1	1.8 V	8-SOIC	Instrumentation	0.154 in	3.9 mm