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IDK08G65C5XTMA2 - INFINEON IDK04G65C5XTMA2

IDK08G65C5XTMA2

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 8 A, 13 NC, TO-263 (D2PAK)

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IDK08G65C5XTMA2 - INFINEON IDK04G65C5XTMA2

IDK08G65C5XTMA2

Active
Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 8 A, 13 NC, TO-263 (D2PAK)

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIDK08G65C5XTMA2
Capacitance @ Vr, F250 pF
Current - Average Rectified (Io)8 A
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackagePG-TO263-2
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.78
10$ 2.45
100$ 1.73
500$ 1.53
Digi-Reel® 1$ 3.78
10$ 2.45
100$ 1.73
500$ 1.53
Tape & Reel (TR) 1000$ 1.31
2000$ 1.25
NewarkEach (Supplied on Cut Tape) 1$ 3.47
10$ 2.44
25$ 2.26
50$ 2.08
100$ 1.89
250$ 1.88
500$ 1.57
1000$ 1.45

Description

General part information

IDK08G65 Series

The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).

Documents

Technical documentation and resources