IDK08G65 Series

Catalog

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 8 A, 13 NC, TO-263 (D2PAK)

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Current - Reverse Leakage @ Vr
Infineon Technologies IDK08G65C5XTMA2	8 A	1.8 V	No Recovery Time	250 pF	650 V	SiC (Silicon Carbide) Schottky	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	175 ░C	-55 C	0 ns	PG-TO263-2
Infineon Technologies IDK08G65C5XTMA1	8 A	1.8 V	No Recovery Time	250 pF	650 V	SiC (Silicon Carbide) Schottky	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	175 ░C	-55 C	0 ns	PG-TO263-2	1.4 mA