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IDB30E120ATMA1 - PG-TO263-3-2

IDB30E120ATMA1

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Infineon Technologies

THE IDB30E120 IS A 1200 V SILICON POWER DIODE IN A D2PAK TO-263 PACKAGE

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IDB30E120ATMA1 - PG-TO263-3-2

IDB30E120ATMA1

Active
Infineon Technologies

THE IDB30E120 IS A 1200 V SILICON POWER DIODE IN A D2PAK TO-263 PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIDB30E120ATMA1
Current - Average Rectified (Io)50 A
Current - Reverse Leakage @ Vr100 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)243 ns
Speed200 mA, 500 ns
Supplier Device PackagePG-TO263-3-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If2.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.57
10$ 1.65
100$ 1.13
500$ 0.91
Digi-Reel® 1$ 2.57
10$ 1.65
100$ 1.13
500$ 0.91
Tape & Reel (TR) 1000$ 0.82
2000$ 0.78
3000$ 0.76
5000$ 0.74

Description

General part information

IDB30E120 Series

Ultra-soft 1200 V, 30 A emitter controlledsilicon power diodein a D2PAK TO-263 package is qualified with a Tj(max)of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.

Documents

Technical documentation and resources