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⌘K
THE IDB30E120 IS A 1200 V SILICON POWER DIODE IN A D2PAK TO-263 PACKAGE
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Package / Case | Supplier Device Package | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Technology | Reverse Recovery Time (trr) | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 150 °C | -55 °C | 1.2 kV | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | PG-TO263-3-2 | 100 µA | 50 A | 2.15 V | Standard | 243 ns | 200 mA 500 ns |