CSD13383F4
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 44 MOHM, GATE ESD PROTECTION
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CSD13383F4
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 44 MOHM, GATE ESD PROTECTION
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CSD13383F4 | CSD13383F4 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.9 A | 2.9 A |
| Drain to Source Voltage (Vdss) | 12 V | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | 2.5 - 4.5 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC | 2.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 291 pF | 291 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 3-XFDFN | 3-XFDFN |
| Power Dissipation (Max) [Max] | 500 mW | 500 mW |
| Rds On (Max) @ Id, Vgs [Max] | 44 mOhm | 44 mOhm |
| Supplier Device Package | 3-PICOSTAR | 3-PICOSTAR |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 10 V | 10 V |
| Vgs (Max) [Min] | -10 V | -10 V |
| Vgs(th) (Max) @ Id | 1.25 V | 1.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.34 | |
| 10 | $ 0.24 | |||
| 100 | $ 0.12 | |||
| 500 | $ 0.11 | |||
| 1000 | $ 0.08 | |||
| Digi-Reel® | 1 | $ 0.34 | ||
| 10 | $ 0.24 | |||
| 100 | $ 0.12 | |||
| 500 | $ 0.11 | |||
| 1000 | $ 0.08 | |||
| Tape & Reel (TR) | 3000 | $ 0.07 | ||
| 6000 | $ 0.07 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.15 | |
| 100 | $ 0.10 | |||
| 250 | $ 0.08 | |||
| 1000 | $ 0.05 | |||
CSD13383F4 Series
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection
| Part | Technology | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Vgs (Max) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13383F4 | MOSFET (Metal Oxide) | 3-XFDFN | 3-PICOSTAR | 44 mOhm | 2.5 V, 4.5 V | 500 mW | 150 °C | -55 °C | Surface Mount | 12 V | 291 pF | N-Channel | 2.9 A | 2.6 nC | 1.25 V | 10 V | -10 V |
Texas Instruments CSD13383F4T | MOSFET (Metal Oxide) | 3-XFDFN | 3-PICOSTAR | 44 mOhm | 2.5 V, 4.5 V | 500 mW | 150 °C | -55 °C | Surface Mount | 12 V | 291 pF | N-Channel | 2.9 A | 2.6 nC | 1.25 V | 10 V | -10 V |
Description
General part information
CSD13383F4 Series
This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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Documents
Technical documentation and resources