CSD13383F4 Series
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection
| Part | Technology | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Vgs (Max) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13383F4 | MOSFET (Metal Oxide) | 3-XFDFN | 3-PICOSTAR | 44 mOhm | 2.5 V, 4.5 V | 500 mW | 150 °C | -55 °C | Surface Mount | 12 V | 291 pF | N-Channel | 2.9 A | 2.6 nC | 1.25 V | 10 V | -10 V |
Texas Instruments CSD13383F4T | MOSFET (Metal Oxide) | 3-XFDFN | 3-PICOSTAR | 44 mOhm | 2.5 V, 4.5 V | 500 mW | 150 °C | -55 °C | Surface Mount | 12 V | 291 pF | N-Channel | 2.9 A | 2.6 nC | 1.25 V | 10 V | -10 V |
Key Features
• Low on-resistanceUltra low Qgand QgdUltra-small footprint (0402 case size)1.0 mm × 0.6 mmLow profile0.36 mm heightIntegrated ESD protection diodeRated >2 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliantLow on-resistanceUltra low Qgand QgdUltra-small footprint (0402 case size)1.0 mm × 0.6 mmLow profile0.36 mm heightIntegrated ESD protection diodeRated >2 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliant
Description
AI
This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
.
.
.
.
This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
.
.
.
.