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DMT6018LDR-13 - Package Image for V-DFN3030-8

DMT6018LDR-13

Active
Diodes Inc

60V 8.8A 26MΩ@4.5V,6.7A 1.1W 3V 2 N-CHANNEL VDFN3030-8 MOSFETS ROHS

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Search across all available documentation for this part.

DocumentsDatasheetRecommended Soldering Techniques+2
DMT6018LDR-13 - Package Image for V-DFN3030-8

DMT6018LDR-13

Active
Diodes Inc

60V 8.8A 26MΩ@4.5V,6.7A 1.1W 3V 2 N-CHANNEL VDFN3030-8 MOSFETS ROHS

Deep-Dive with AI

DocumentsDatasheetRecommended Soldering Techniques+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT6018LDR-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C8.8 A
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs13.9 nC
Input Capacitance (Ciss) (Max) @ Vds869 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max [Max]1.9 W
Rds On (Max) @ Id, Vgs17 mOhm
Supplier Device PackageV-DFN3030-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.90
10$ 0.78
100$ 0.54
500$ 0.45
1000$ 0.38
2000$ 0.34
5000$ 0.32
Digi-Reel® 1$ 0.90
10$ 0.78
100$ 0.54
500$ 0.45
1000$ 0.38
2000$ 0.34
5000$ 0.32
Tape & Reel (TR) 10000$ 0.30
LCSCPiece 1$ 0.77
10$ 0.75
30$ 0.74
100$ 0.73

Description

General part information

DMT6018LDR Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.