DMT6018LDR Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Configuration	Drain to Source Voltage (Vdss)
Diodes Inc DMT6018LDR-13	8-PowerVDFN	13.9 nC	Surface Mount	-55 °C	150 °C	1.9 W	8.8 A	17 mOhm	V-DFN3030-8	MOSFET (Metal Oxide)	869 pF	3 V	2 N-Channel (Dual)	60 V

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.