IPI100N06S3L04XK

Obsolete

Infineon Technologies

MOSFET N-CH 55V 100A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 55V 100A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI100N06S3L04XK

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	362 nC
Input Capacitance (Ciss) (Max) @ Vds	17270 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Grade	Qualification	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Infineon Technologies IPI100N04S4H2AKSA1	Through Hole	10 V	7180 pF	PG-TO262-3	100 A	115 W	90 nC	N-Channel	MOSFET (Metal Oxide)	40 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	20 V	2.7 mOhm	4 V
Infineon Technologies IPI100N12S305AKSA1	Through Hole	10 V	11570 pF		100 A		185 nC	N-Channel	MOSFET (Metal Oxide)	120 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	20 V	5.1 mOhm	4 V	Automotive	AEC-Q101	300 W
Infineon Technologies IPI100N06S3L04XK	Through Hole		17270 pF	PG-TO262-3	100 A	214 W	362 nC	N-Channel	MOSFET (Metal Oxide)	55 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	16 V	3.8 mOhm	2.2 V				10 V	5 V
Infineon Technologies IPI100N10S305AKSA1	Through Hole	10 V	11570 pF	PG-TO262-3	100 A		176 nC	N-Channel	MOSFET (Metal Oxide)	100 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	20 V	5.1 mOhm	4 V			300 W
Infineon Technologies IPI100N08N3GHKSA1	Through Hole	6 V 10 V	2410 pF	PG-TO262-3	70 A		35 nC	N-Channel	MOSFET (Metal Oxide)	80 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	20 V	10 mOhm	3.5 V			100 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3

Technical documentation and resources