IPI100N Series

Catalog

MOSFET N-CH 40V 100A TO262-3

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Grade	Qualification	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Infineon Technologies IPI100N04S4H2AKSA1	Through Hole	10 V	7180 pF	PG-TO262-3	100 A	115 W	90 nC	N-Channel	MOSFET (Metal Oxide)	40 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	20 V	2.7 mOhm	4 V
Infineon Technologies IPI100N12S305AKSA1	Through Hole	10 V	11570 pF		100 A		185 nC	N-Channel	MOSFET (Metal Oxide)	120 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	20 V	5.1 mOhm	4 V	Automotive	AEC-Q101	300 W
Infineon Technologies IPI100N06S3L04XK	Through Hole		17270 pF	PG-TO262-3	100 A	214 W	362 nC	N-Channel	MOSFET (Metal Oxide)	55 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	16 V	3.8 mOhm	2.2 V				10 V	5 V
Infineon Technologies IPI100N10S305AKSA1	Through Hole	10 V	11570 pF	PG-TO262-3	100 A		176 nC	N-Channel	MOSFET (Metal Oxide)	100 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	20 V	5.1 mOhm	4 V			300 W
Infineon Technologies IPI100N08N3GHKSA1	Through Hole	6 V 10 V	2410 pF	PG-TO262-3	70 A		35 nC	N-Channel	MOSFET (Metal Oxide)	80 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	20 V	10 mOhm	3.5 V			100 W