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BSZ086P03NS3EGATMA1 - PG-TSDSON-8

BSZ086P03NS3EGATMA1

Active
Infineon Technologies

OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; PQFN 3.3 X 3.3 PACKAGE; 8.6 MOHM;

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Search across all available documentation for this part.

BSZ086P03NS3EGATMA1 - PG-TSDSON-8

BSZ086P03NS3EGATMA1

Active
Infineon Technologies

OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; PQFN 3.3 X 3.3 PACKAGE; 8.6 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ086P03NS3EGATMA1
Current - Continuous Drain (Id) @ 25°C40 A, 13.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs57.5 nC
Input Capacitance (Ciss) (Max) @ Vds4785 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)69 W, 2.1 W
Rds On (Max) @ Id, Vgs8.6 mOhm
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.88
10$ 0.76
100$ 0.53
500$ 0.44
1000$ 0.38
2000$ 0.34
Digi-Reel® 1$ 0.88
10$ 0.76
100$ 0.53
500$ 0.44
1000$ 0.38
2000$ 0.34
Tape & Reel (TR) 5000$ 0.32
10000$ 0.29
25000$ 0.29
NewarkEach (Supplied on Cut Tape) 1$ 1.10
10$ 0.77
25$ 0.74
50$ 0.63
100$ 0.53
250$ 0.51
500$ 0.42
1000$ 0.35

Description

General part information

BSZ086 Series

These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Documents

Technical documentation and resources

No documents available