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OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; PQFN 3.3 X 3.3 PACKAGE; 8.6 MOHM;
| Part | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs (Max) | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.1 W 69 W | MOSFET (Metal Oxide) | 8.6 mOhm | -55 °C | 150 °C | P-Channel | 57.5 nC | 13.5 A 40 A | PG-TSDSON-8 | 25 V | Surface Mount | 8-PowerTDFN | 30 V | 4785 pF | 6 V 10 V | 3.1 V |