Specification	TSM6502CR

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Tc)	24 A
Current - Continuous Drain (Id) (Tc) (2)	18 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	10.3 nC
Input Capacitance (Ciss) (Max)	930 pF, 1159 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-PDFN
Package Width	6 mm
Power - Max	40 W
Rds On (Max)	68 mOhm, 34 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

TSM6502 Series

Part	Input Capacitance (Ciss) (Max)	Power - Max	Package Length	Package Name	Package Width	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs(th) (Max)	Gate Charge (Max)	Configuration	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Tc) (2)	Rds On (Max)
Taiwan Semiconductor Corporation TSM6502CR RLG	930 pF 1159 pF	40 W	5 mm	8-PDFN	6 mm	60 V	8-PowerTDFN	Surface Mount	2.5 V	10.3 nC	N P-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	24 A	18 A	34 mOhm 68 mOhm
Taiwan Semiconductor Corporation TSM6502CR	930 pF 1159 pF	40 W	5 mm	8-PDFN	6 mm	60 V	8-PowerTDFN	Surface Mount	2.5 V	10.3 nC	N P-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	24 A	18 A	34 mOhm 68 mOhm

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