TSM6502 Series

Catalog

MOSFET N/P-CH 60V 24A/18A 8DFN

Part	Power - Max [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Taiwan Semiconductor Corporation TSM6502CR RLG	40 W	MOSFET (Metal Oxide)	-55 °C	150 °C	60 V	18 A 24 A	8-PDFN (5x6)	N and P-Channel	2.5 V	Surface Mount	9.5 nC	10.3 nC	34 mOhm 68 mOhm	8-PowerTDFN	930 pF 1159 pF
Taiwan Semiconductor Corporation TSM6502CR	40 W	MOSFET (Metal Oxide)	-55 °C	150 °C	60 V	18 A 24 A	8-PDFN (5x6)	N and P-Channel	2.5 V	Surface Mount	9.5 nC	10.3 nC	34 mOhm 68 mOhm	8-PowerTDFN	930 pF 1159 pF