MMDT4413-7

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 40V V(BR)CEO, 2-ELEMENT, NPN AND PNP, SILICON, ULTRA SMALL, PLASTIC PACKAGE-6

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 40V V(BR)CEO, 2-ELEMENT, NPN AND PNP, SILICON, ULTRA SMALL, PLASTIC PACKAGE-6

Technical Specifications

Parameters and characteristics for this part

Specification	MMDT4413-7

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Part	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Max]	Operating Temperature [Min]
Diodes Inc MMDT4413-7
Diodes Inc MMDT4413-7-F	SOT-363	200 MHz 250 MHz	200 mW	750 mV	1 NPN 1 PNP	6-TSSOP SC-88 SOT-363	600 mA	Surface Mount	100 hFE 100 hFE	40 V	150 °C	-65 °C

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General part information

Bipolar (BJT) Transistor Array

Technical documentation and resources