MMDT4413-7-F

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Diodes Inc

TRANS GP BJT NPN/PNP 40V 0.6A 200MW 6-PIN SOT-363 T/R

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Diodes Inc

TRANS GP BJT NPN/PNP 40V 0.6A 200MW 6-PIN SOT-363 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	MMDT4413-7-F

Current - Collector (Ic) (Max) [Max]	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 hFE, 100 hFE
Frequency - Transition	200 MHz, 250 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Supplier Device Package	SOT-363
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Max]	Operating Temperature [Min]
Diodes Inc MMDT4413-7
Diodes Inc MMDT4413-7-F	SOT-363	200 MHz 250 MHz	200 mW	750 mV	1 NPN 1 PNP	6-TSSOP SC-88 SOT-363	600 mA	Surface Mount	100 hFE 100 hFE	40 V	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Epitaxial Die Construction

Ideal for Medium Power Amplification and Switching

Ultra-Small Surface Mount Package

Technical documentation and resources