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IKQ75N120CS6XKSA1 - Infineon Technologies AG-IKQ75N120CS6XKSA1 IGBT Chip 0818 IKQ75N Infineon IGBT6

IKQ75N120CS6XKSA1

Active
Infineon Technologies

1200 V, 75 A TRENCHSTOP™ IGBT6 WITH ANTI-PARALLEL DIODE IN TO247 HOUSING. WITH A SWITCHING FREQUENCY RANGE FROM 10 KHZ TO 50 KHZ IT PERFECTLY MATCHES APPLICATIONS LIKE UNINTERRUPTIBLE POWER SUPPLY, WELDING CONVERTER, BATTERY CHARGER OR SOLAR CONVERTER.

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IKQ75N120CS6XKSA1 - Infineon Technologies AG-IKQ75N120CS6XKSA1 IGBT Chip 0818 IKQ75N Infineon IGBT6

IKQ75N120CS6XKSA1

Active
Infineon Technologies

1200 V, 75 A TRENCHSTOP™ IGBT6 WITH ANTI-PARALLEL DIODE IN TO247 HOUSING. WITH A SWITCHING FREQUENCY RANGE FROM 10 KHZ TO 50 KHZ IT PERFECTLY MATCHES APPLICATIONS LIKE UNINTERRUPTIBLE POWER SUPPLY, WELDING CONVERTER, BATTERY CHARGER OR SOLAR CONVERTER.

Technical Specifications

Parameters and characteristics for this part

SpecificationIKQ75N120CS6XKSA1
Current - Collector (Ic) (Max) [Max]150 A
Current - Collector Pulsed (Icm)300 A
Gate Charge530 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-247-3
Power - Max [Max]880 W
Reverse Recovery Time (trr)440 ns
Supplier Device PackagePG-TO247-3-46
Switching Energy2.95 mJ, 5.15 mJ
Td (on/off) @ 25°C34 ns
Td (on/off) @ 25°C300 ns
Test Condition600 V, 75 A, 15 V, 4 Ohm
Vce(on) (Max) @ Vge, Ic2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 5.99
10$ 5.96
25$ 4.72
30$ 4.67
120$ 4.63
240$ 4.58
DigikeyTube 1$ 10.28
30$ 8.21
120$ 7.34
510$ 6.48
1020$ 5.83
NewarkEach 1$ 10.13
10$ 10.09
25$ 8.51
50$ 8.26
100$ 8.14
480$ 8.14

Description

General part information

IKQ75N120 Series

Hard-switching 1200 V, 75 A high speedTRENCHSTOP™ IGBT6co-packed with a very soft and fast recovery full current anti-parallel diode in a TO-247PLUS 3pin package is the responding to the market requirements for high efficiency and high current density in small discrete packages.