STD1NK60T4

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STMicroelectronics

N-CHANNEL 600 V, 7.3 OHM TYP., 1 A SUPERMESH POWER MOSFET IN DPAK PACKAGE

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STD1NK60T4

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STMicroelectronics

N-CHANNEL 600 V, 7.3 OHM TYP., 1 A SUPERMESH POWER MOSFET IN DPAK PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD1NK60T4

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	156 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	8.5 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

STD1NK60T4 Series

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
STMicroelectronics STD1NK60T4	10 V	30 V	156 pF	MOSFET (Metal Oxide)	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.7 V	-55 °C	150 °C	8.5 Ohm	Surface Mount	1 A	DPAK	10 nC	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.00
		10	$ 0.82
		100	$ 0.64
		500	$ 0.54
		1000	$ 0.44
	Digi-Reel®	1	$ 1.00
		10	$ 0.82
		100	$ 0.64
		500	$ 0.54
		1000	$ 0.44
	Tape & Reel (TR)	2500	$ 0.41
		5000	$ 0.39
		12500	$ 0.38
		25000	$ 0.38
Newark	Each (Supplied on Full Reel)	2500	$ 0.57
		5000	$ 0.56
		10000	$ 0.55
		15000	$ 0.54

Description

General part information

STD1NK60T4 Series

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Documents

Technical documentation and resources