STD1NK60T4 Series

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package

Catalog

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
STMicroelectronics STD1NK60T4	10 V	30 V	156 pF	MOSFET (Metal Oxide)	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.7 V	-55 °C	150 °C	8.5 Ohm	Surface Mount	1 A	DPAK	10 nC	600 V

Catalog

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package

Description

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.