IR21084PBF

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Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14DIP

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Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IR21084PBF

Channel Type	Independent
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.9 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	14-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Logic Voltage - VIL, VIH	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Package / Case [x]	Package / Case [y]	Package / Case	Driven Configuration	Gate Type	Mounting Type	Supplier Device Package
Infineon Technologies 98-0317	0.8 V 2.9 V	150 ns	50 ns	600 V	Non-Inverting	150 °C	-40 °C	2	20 V	10 VDC	Independent	0.154 in	3.9 mm	14-SOIC	Half-Bridge	IGBT N-Channel MOSFET	Surface Mount
Infineon Technologies IR21084SPBF	0.8 V 2.9 V	150 ns	50 ns	600 V	Non-Inverting	150 °C	-40 °C	2	20 V	10 VDC	Independent	0.154 in	3.9 mm	14-SOIC	Half-Bridge	IGBT N-Channel MOSFET	Surface Mount
Infineon Technologies IR21084PBF	0.8 V 2.9 V	150 ns	50 ns	600 V	Non-Inverting	150 °C	-40 °C	2	20 V	10 VDC	Independent	0.3 "	7.62 mm	14-DIP	Half-Bridge	IGBT N-Channel MOSFET	Through Hole	14-DIP
Infineon Technologies IR21084PBF	0.8 V 2.9 V	150 ns	50 ns	600 V	Non-Inverting	150 °C	-40 °C	2	20 V	10 VDC	Independent	0.3 "	7.62 mm	14-DIP	Half-Bridge	IGBT N-Channel MOSFET	Through Hole	14-DIP
Infineon Technologies IR21084STR	0.8 V 2.9 V	150 ns	50 ns	600 V	Non-Inverting	150 °C	-40 °C	2	20 V	10 VDC	Independent	0.154 in	3.9 mm	14-SOIC	Half-Bridge	IGBT N-Channel MOSFET	Surface Mount
Infineon Technologies IR21084STRPBF	0.8 V 2.9 V	150 ns	50 ns	600 V	Non-Inverting	150 °C	-40 °C	2	20 V	10 VDC	Independent	0.154 in	3.9 mm	14-SOIC	Half-Bridge	IGBT N-Channel MOSFET	Surface Mount

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General part information

Half-Bridge Gate Driver IC Non-Inverting 14-DIP

Technical documentation and resources