IC GATE DRVR HALF-BRIDGE 14SOIC
| Part | Logic Voltage - VIL, VIH | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Input Type | Operating Temperature [Max] | Operating Temperature [Min] | Number of Drivers | Voltage - Supply [Max] | Voltage - Supply [Min] | Channel Type | Package / Case [x] | Package / Case [y] | Package / Case | Driven Configuration | Gate Type | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 0.8 V 2.9 V | 150 ns | 50 ns | 600 V | Non-Inverting | 150 °C | -40 °C | 2 | 20 V | 10 VDC | Independent | 0.154 in | 3.9 mm | 14-SOIC | Half-Bridge | IGBT N-Channel MOSFET | Surface Mount | |
Infineon Technologies | 0.8 V 2.9 V | 150 ns | 50 ns | 600 V | Non-Inverting | 150 °C | -40 °C | 2 | 20 V | 10 VDC | Independent | 0.154 in | 3.9 mm | 14-SOIC | Half-Bridge | IGBT N-Channel MOSFET | Surface Mount | |
Infineon Technologies | 0.8 V 2.9 V | 150 ns | 50 ns | 600 V | Non-Inverting | 150 °C | -40 °C | 2 | 20 V | 10 VDC | Independent | 0.3 " | 7.62 mm | 14-DIP | Half-Bridge | IGBT N-Channel MOSFET | Through Hole | 14-DIP |
Infineon Technologies | 0.8 V 2.9 V | 150 ns | 50 ns | 600 V | Non-Inverting | 150 °C | -40 °C | 2 | 20 V | 10 VDC | Independent | 0.3 " | 7.62 mm | 14-DIP | Half-Bridge | IGBT N-Channel MOSFET | Through Hole | 14-DIP |
Infineon Technologies | 0.8 V 2.9 V | 150 ns | 50 ns | 600 V | Non-Inverting | 150 °C | -40 °C | 2 | 20 V | 10 VDC | Independent | 0.154 in | 3.9 mm | 14-SOIC | Half-Bridge | IGBT N-Channel MOSFET | Surface Mount | |
Infineon Technologies | 0.8 V 2.9 V | 150 ns | 50 ns | 600 V | Non-Inverting | 150 °C | -40 °C | 2 | 20 V | 10 VDC | Independent | 0.154 in | 3.9 mm | 14-SOIC | Half-Bridge | IGBT N-Channel MOSFET | Surface Mount |