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IPW90R1K2C3FKSA1 - IHW15N120R3FKSA1

IPW90R1K2C3FKSA1

Obsolete
Infineon Technologies

MOSFET N-CH 900V 5.1A TO247-3

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IPW90R1K2C3FKSA1 - IHW15N120R3FKSA1

IPW90R1K2C3FKSA1

Obsolete
Infineon Technologies

MOSFET N-CH 900V 5.1A TO247-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW90R1K2C3FKSA1
Current - Continuous Drain (Id) @ 25°C5.1 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]28 nC
Input Capacitance (Ciss) (Max) @ Vds710 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs1.2 Ohm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IPW90R Series

N-Channel 900 V 5.1A (Tc) 83W (Tc) Through Hole PG-TO247-3-1

Documents

Technical documentation and resources

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