IPW90R Series

Catalog

MOSFET N-CH 900V 36A TO247-3

Part	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPW90R120C3FKSA1	TO-247-3	3.5 V	10 V	417 W	270 nC	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	36 A	120 mOhm	900 V	N-Channel	20 V	6800 pF	PG-TO247-3-1
Infineon Technologies IPW90R1K2C3FKSA1	TO-247-3	3.5 V	10 V			MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	5.1 A	1.2 Ohm	900 V	N-Channel	20 V		PG-TO247-3-1	710 pF	83 W	28 nC
Infineon Technologies IPW90R500C3FKSA1	TO-247-3	3.5 V	10 V			MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	11 A	500 mOhm	900 V	N-Channel	20 V		PG-TO247-3-1	1700 pF	156 W	68 nC
Infineon Technologies IPW90R1K0C3FKSA1	TO-247-3	3.5 V	10 V		34 nC	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	5.7 A	1 Ohm	900 V	N-Channel	20 V	850 pF	PG-TO247-3-1