
IPI041N12N3GAKSA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; I2PAK TO-262 PACKAGE; 4.1 MOHM;
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IPI041N12N3GAKSA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; I2PAK TO-262 PACKAGE; 4.1 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPI041N12N3GAKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 211 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 4.1 mOhm |
| Supplier Device Package | PG-TO262-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.12 | |
| 50 | $ 2.25 | |||
Description
General part information
IPI041 Series
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.
Documents
Technical documentation and resources