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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; I2PAK TO-262 PACKAGE; 4.1 MOHM;
| Part | Power Dissipation (Max) [Max] | FET Type | Vgs (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 300 W | N-Channel | 20 V | PG-TO262-3 | 120 A | I2PAK TO-262-3 Long Leads TO-262AA | 211 nC | 4 V | MOSFET (Metal Oxide) | 13800 pF | 10 V | Through Hole | -55 °C | 175 ░C | 120 V | 4.1 mOhm |