Specification	AON6934

Channel Count	2
Configuration	N-Channel, Asymmetrical
Configuration - Features	Dual
Current - Continuous Drain (Id) (Maximum)	30 A
Current - Continuous Drain (Id) (Typical)	22 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	1037 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Length	5 mm
Package Name	8-DFN
Package Width	6 mm
Power - Max (Value 1)	3.6 W
Power - Max (Value 2)	4.3 W
Rds On (Max)	5.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.2 V

AON693 Series

Part	Vgs(th) (Max)	Channel Count	Configuration	Configuration - Features	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Package Length	Package Name	Package Width	FET Feature	Drain to Source Voltage (Vdss)	Power - Max (Value 1)	Power - Max (Value 2)	Technology	Gate Charge (Max)	Mounting Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)
Alpha & Omega Semiconductor Inc. AON6938	2.5 V	2	Asymmetrical N-Channel	Dual	1150 pF	33 A	17 A	5 mm	8-DFN	6 mm	Logic Level Gate	30 V	3.6 W	4.3 W	MOSFET (Metal Oxide)	24 nC	Surface Mount	8-PowerVDFN	-55 °C	150 °C	8.2 mOhm
Alpha & Omega Semiconductor Inc. AON6936	2.5 V	2	Asymmetrical N-Channel	Dual	984 pF	40 A	22 A	5 mm	8-DFN	6 mm	Logic Level Gate	30 V	3.6 W	4.3 W	MOSFET (Metal Oxide)	24 nC	Surface Mount	8-PowerVDFN	-55 °C	150 °C	4.9 mOhm
Alpha & Omega Semiconductor Inc. AON6934	2.2 V	2	Asymmetrical N-Channel	Dual	1037 pF	30 A	22 A	5 mm	8-DFN	6 mm	Logic Level Gate	30 V	3.6 W	4.3 W	MOSFET (Metal Oxide)	22 nC	Surface Mount	8-PowerVDFN	-55 °C	150 °C	5.2 mOhm

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