MOSFET 2N-CH 30V 17A/33A 8DFN
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Feature | Configuration | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Power - Max | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | -55 °C | 150 °C | Surface Mount | Logic Level Gate | 2 N-Channel (Dual) Asymmetrical | 17 A 33 A | MOSFET (Metal Oxide) | 2.5 V | 1150 pF | 8.2 mOhm | 3.6 W 4.3 W | 8-DFN (5x6) | 8-PowerVDFN | 30 V | 24 nC | ||
Alpha & Omega Semiconductor Inc. | -55 °C | 150 °C | Surface Mount | Logic Level Gate | 2 N-Channel (Dual) Asymmetrical | 22 A 40 A | MOSFET (Metal Oxide) | 2.5 V | 984 pF | 4.9 mOhm | 3.6 W 4.3 W | 8-DFN (5x6) | 8-PowerVDFN | 30 V | 24 nC | ||
Alpha & Omega Semiconductor Inc. | -55 °C | 150 °C | Surface Mount | Logic Level Gate | 2 N-Channel (Dual) Asymmetrical | 22 A 30 A | MOSFET (Metal Oxide) | 1037 pF | 3.6 W 4.3 W | 8-DFN (5x6) | 8-PowerVDFN | 30 V | 22 nC | 5.2 mOhm | 2.2 V |