MT3S113TU,LF

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Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 11.2GHZ UFM

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Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 11.2GHZ UFM

Technical Specifications

Parameters and characteristics for this part

Specification	MT3S113TU,LF

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	11.2 GHz
Gain	12.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.45 dB
Operating Temperature	150 °C
Power - Max [Max]	900 mW
Supplier Device Package	UFM
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	5.3 V

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Package / Case	Mounting Type	Frequency - Transition	Power - Max [Max]	Gain	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Supplier Device Package	Noise Figure (dB Typ @ f)	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage MT3S113(TE85L,F)	100 mA	150 °C	SC-59 SOT-23-3 TO-236-3	Surface Mount	12.5 GHz	800 mW	11.8 dB	200	NPN	S-Mini	1.45 dB	5.3 V
Toshiba Semiconductor and Storage MT3S113TU,LF	100 mA	150 °C		Surface Mount	11.2 GHz	900 mW	12.5 dBi	200	NPN	UFM	1.45 dB	5.3 V

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General part information

RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

Technical documentation and resources