MT3S113(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 12.5GHZ SMINI

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Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 12.5GHZ SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	MT3S113(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	12.5 GHz
Gain	11.8 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.45 dB
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	800 mW
Supplier Device Package	S-Mini
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	5.3 V

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Package / Case	Mounting Type	Frequency - Transition	Power - Max [Max]	Gain	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Supplier Device Package	Noise Figure (dB Typ @ f)	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage MT3S113(TE85L,F)	100 mA	150 °C	SC-59 SOT-23-3 TO-236-3	Surface Mount	12.5 GHz	800 mW	11.8 dB	200	NPN	S-Mini	1.45 dB	5.3 V
Toshiba Semiconductor and Storage MT3S113TU,LF	100 mA	150 °C		Surface Mount	11.2 GHz	900 mW	12.5 dBi	200	NPN	UFM	1.45 dB	5.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini

Technical documentation and resources