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IPW65R099C6FKSA1 - PG-TO247-3

IPW65R099C6FKSA1

NRND
Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 99 MOHM;

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IPW65R099C6FKSA1 - PG-TO247-3

IPW65R099C6FKSA1

NRND
Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 99 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW65R099C6FKSA1
Current - Continuous Drain (Id) @ 25°C38 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs127 nC
Input Capacitance (Ciss) (Max) @ Vds2780 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)278 W
Rds On (Max) @ Id, Vgs99 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 240$ 4.22
NewarkEach 1$ 5.88

Description

General part information

IPW65R099 Series

CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Documents

Technical documentation and resources