IPW65R099 Series

Catalog

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 99 MOHM;

Part	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Rds On (Max) @ Id, Vgs [Max]	Qualification
Infineon Technologies IPW65R099C6FKSA1	MOSFET (Metal Oxide)	278 W	99 mOhm	3.5 V	38 A	127 nC	Through Hole	N-Channel	TO-247-3	2780 pF	650 V	20 V	PG-TO247-3-1	10 V	-55 °C	150 °C
Infineon Technologies IPW65R099CFD7AXKSA1	MOSFET (Metal Oxide)	127 W		4.5 V	24 A	53 nC	Through Hole	N-Channel	TO-247-3	2513 pF	650 V	20 V	PG-TO247-3-41	10 V	-40 °C	150 °C	Automotive	99 mOhm	AEC-Q101