STP12NK30Z

Active

STMicroelectronics

N-CHANNEL 300 V, 360 MOHM TYP., 9 A SUPER-MESH POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Product Change Notice EN +19

STP12NK30Z

Active

STMicroelectronics

N-CHANNEL 300 V, 360 MOHM TYP., 9 A SUPER-MESH POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Product Change Notice EN +19

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP12NK30Z

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	670 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STP12N60M2 Series

N-channel 300 V, 360 mOhm typ., 9 A SUPER-MESH Power MOSFET in a TO-220 package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature
STMicroelectronics STP12N60M2	-55 °C	150 °C	10 V	9 A	TO-220	N-Channel	4 V	85 W	Through Hole	450 mOhm	600 V	538 pF	25 V	TO-220-3	16 nC	MOSFET (Metal Oxide)
STMicroelectronics STP12NM50N	-55 °C	150 °C	10 V	11 A	TO-220	N-Channel	4 V	100 W	Through Hole	380 mOhm	500 V	940 pF	25 V	TO-220-3		MOSFET (Metal Oxide)	30 nC
STMicroelectronics STP12NK30Z	-55 °C	150 °C	10 V	9 A	TO-220	N-Channel	4.5 V		Through Hole	400 mOhm	300 V		30 V	TO-220-3	35 nC	MOSFET (Metal Oxide)		90 W	670 pF
STMicroelectronics STP12NK60Z			10 V	10 A	TO-220	N-Channel	4.5 V		Through Hole	640 mOhm	600 V	1740 pF	30 V	TO-220-3		MOSFET (Metal Oxide)	59 nC	150 W		150 °C
STMicroelectronics STP12NM50	-65 °C	150 °C	10 V	12 A	TO-220	N-Channel	5 V		Through Hole	350 mOhm	500 V	1000 pF	30 V	TO-220-3	39 nC	MOSFET (Metal Oxide)
STMicroelectronics STP12N50M2	-55 °C	150 °C	10 V	10 A	TO-220	N-Channel	4 V	85 W	Through Hole	380 mOhm	500 V	560 pF	25 V	TO-220-3		MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.50
		50	$ 2.01
		100	$ 1.65
		500	$ 1.40
		1000	$ 1.19
		2000	$ 1.13
		5000	$ 1.08
Newark	Each	1	$ 2.57
		10	$ 1.32
		100	$ 1.24
		500	$ 1.10
		1000	$ 1.04
		2500	$ 0.93
		10000	$ 0.88

Description

General part information

STP12N60M2 Series

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

STP12NK30Z

Deep-Dive with AI

STP12NK30Z

Deep-Dive with AI

Technical Specifications

STP12N60M2 Series

Pricing

Description

STP12N60M2 Series

Documents

Technical Data Sheet EN

Product Change Notice EN

Datasheet

AN4250

AN2842

AN2344

DS2996

TN1225

TN1156

TN1224

TN1378

UM1575

AN4337

Datasheet

STP12N60M2 Series