STP12N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.395 OHM TYP., 9 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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STP12N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.395 OHM TYP., 9 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	STP12N60M2

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	538 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STP12N60M2 Series

N-channel 300 V, 360 mOhm typ., 9 A SUPER-MESH Power MOSFET in a TO-220 package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature
STMicroelectronics STP12N60M2	-55 °C	150 °C	10 V	9 A	TO-220	N-Channel	4 V	85 W	Through Hole	450 mOhm	600 V	538 pF	25 V	TO-220-3	16 nC	MOSFET (Metal Oxide)
STMicroelectronics STP12NM50N	-55 °C	150 °C	10 V	11 A	TO-220	N-Channel	4 V	100 W	Through Hole	380 mOhm	500 V	940 pF	25 V	TO-220-3		MOSFET (Metal Oxide)	30 nC
STMicroelectronics STP12NK30Z	-55 °C	150 °C	10 V	9 A	TO-220	N-Channel	4.5 V		Through Hole	400 mOhm	300 V		30 V	TO-220-3	35 nC	MOSFET (Metal Oxide)		90 W	670 pF
STMicroelectronics STP12NK60Z			10 V	10 A	TO-220	N-Channel	4.5 V		Through Hole	640 mOhm	600 V	1740 pF	30 V	TO-220-3		MOSFET (Metal Oxide)	59 nC	150 W		150 °C
STMicroelectronics STP12NM50	-65 °C	150 °C	10 V	12 A	TO-220	N-Channel	5 V		Through Hole	350 mOhm	500 V	1000 pF	30 V	TO-220-3	39 nC	MOSFET (Metal Oxide)
STMicroelectronics STP12N50M2	-55 °C	150 °C	10 V	10 A	TO-220	N-Channel	4 V	85 W	Through Hole	380 mOhm	500 V	560 pF	25 V	TO-220-3		MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 1.30
		100	$ 1.07
		250	$ 1.05
		500	$ 0.91
		1250	$ 0.77
		2500	$ 0.73
		5000	$ 0.70

Description

General part information

STP12N60M2 Series

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

STP12N60M2

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STP12N60M2

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Technical Specifications

STP12N60M2 Series

Pricing

Description

STP12N60M2 Series

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Datasheet

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STP12N60M2 Series