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STP14NM50N - TO-220-3

STP14NM50N

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STMicroelectronics

N-CHANNEL 500 V, 0.28 OHM, 12 A MDMESH(TM) II POWER MOSFET IN TO-220 PACKAGE

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STP14NM50N - TO-220-3

STP14NM50N

Active
STMicroelectronics

N-CHANNEL 500 V, 0.28 OHM, 12 A MDMESH(TM) II POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

Documents+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP14NM50N
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]27 nC
Input Capacitance (Ciss) (Max) @ Vds816 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)90 W
Rds On (Max) @ Id, Vgs320 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.71
50$ 2.15
100$ 1.84
500$ 1.80
NewarkEach 1$ 3.46
10$ 2.94
100$ 2.37
500$ 2.17
1000$ 1.94
2500$ 1.61

Description

General part information

STP14N80K5 Series

The SuperMESHTMseries is obtained through an extreme optimization of ST’s well established strip-based PowerMESHTMlayout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTMproducts.