STP14N80K5 Series

N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package

Catalog

N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP14NK50ZFP	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-220FP	4.5 V	92 nC	500 V	10 V	380 mOhm	TO-220-3 Full Pack	Through Hole	14 A	30 V	35 W
STMicroelectronics STP14N80K5	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-220	5 V		800 V	10 V	445 mOhm	TO-220-3	Through Hole	12 A	30 V		620 pF	130 W	22 nC
STMicroelectronics STP14NM50N	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-220	4 V		500 V	10 V	320 mOhm	TO-220-3	Through Hole	12 A	25 V			90 W	27 nC	816 pF

Catalog

N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package

Description

The SuperMESHTMseries is obtained through an extreme optimization of ST’s well established strip-based PowerMESHTMlayout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTMproducts.