
BSC084P03NS3EGATMA1
ObsoleteInfineon Technologies
OPTIMOS™ POWER MOSFET -30 V ; SUPERSO8 5X6 PACKAGE; 8.4 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

BSC084P03NS3EGATMA1
ObsoleteInfineon Technologies
OPTIMOS™ POWER MOSFET -30 V ; SUPERSO8 5X6 PACKAGE; 8.4 MOHM;
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC084P03NS3EGATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 78.6 A, 14.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 57.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4240 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W, 69 W |
| Supplier Device Package | PG-TDSON-8-5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id [Max] | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BSC084 Series
These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Documents
Technical documentation and resources