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OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; SUPERSO8 5X6 PACKAGE; 8.4 MOHM;
| Part | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Power Dissipation (Max) | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.1 V | 30 V | 8-PowerTDFN | 4785 pF | 58 nC | PG-TDSON-8-5 | 2.5 W 69 W | MOSFET (Metal Oxide) | 25 V | 14.9 A 78.6 A | 6 V 10 V | P-Channel | -55 °C | 150 °C | Surface Mount | ||
Infineon Technologies | 30 V | 8-PowerTDFN | 4240 pF | PG-TDSON-8-5 | 2.5 W 69 W | MOSFET (Metal Oxide) | 25 V | 14.9 A 78.6 A | 6 V 10 V | P-Channel | -55 °C | 150 °C | Surface Mount | 57.7 nC | 3 V |