TSM4424CS RVG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 20V 8A 8SOP

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 20V 8A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4424CS RVG

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11.2 nC
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Taiwan Semiconductor Corporation TSM4424CS RVG	1 V	20 V	8 A	500 pF	N-Channel	8-SOIC	3.9 mm	0.154 in	Surface Mount	30 mOhm	11.2 nC	MOSFET (Metal Oxide)	8 V	2.5 W	1.8 V 4.5 V	-55 °C	150 °C	8-SOP

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General part information

N-Channel 20 V 8A (Tc) 2.5W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available