Beta
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MOSFET N-CHANNEL 20V 8A 8SOP
| Part | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 1 V | 20 V | 8 A | 500 pF | N-Channel | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 30 mOhm | 11.2 nC | MOSFET (Metal Oxide) | 8 V | 2.5 W | 1.8 V 4.5 V | -55 °C | 150 °C | 8-SOP |