IR21834STRPBF

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Infineon Technologies

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 1.9 A SOURCE AND 2.3 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 14N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: PROGRAMMABLE DEADTIME, SEPARATE PIN FOR LOGIC GROUND, SHOOT THROUGH PROTECTION

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IR21834STRPBF

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Infineon Technologies

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DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR21834STRPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2.3 A
Current - Peak Output (Source, Sink) [custom]	1.9 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	2.7 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	40 ns
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR21834 Series

Part	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Number of Drivers	Channel Type	Input Type
Infineon Technologies IR21834PBF	IGBT N-Channel MOSFET	150 °C	-40 °C	20 V	10 VDC	0.8 V 2.7 V	14-DIP	2.3 A	1.9 A	Half-Bridge	14-DIP	7.62 mm	0.3 "	20 ns	40 ns	600 V	Through Hole	2	Independent	Inverting Non-Inverting
Infineon Technologies IR21834	IGBT N-Channel MOSFET	150 °C	-40 °C	20 V	10 VDC	0.8 V 2.7 V	14-DIP	2.3 A	1.9 A	Half-Bridge	14-DIP	7.62 mm	0.3 "	20 ns	40 ns	600 V	Through Hole	2	Independent	Inverting Non-Inverting
Infineon Technologies IR21834STR	IGBT N-Channel MOSFET	150 °C	-40 °C	20 V	10 VDC	0.8 V 2.7 V		2.3 A	1.9 A	Half-Bridge	14-SOIC	3.9 mm	0.154 in	20 ns	40 ns	600 V	Surface Mount	2	Independent	Inverting Non-Inverting
Infineon Technologies IR21834PBF
Infineon Technologies IR21834SPBF	IGBT N-Channel MOSFET	150 °C	-40 °C	20 V	10 VDC	0.8 V 2.7 V		2.3 A	1.9 A	Half-Bridge	14-SOIC	3.9 mm	0.154 in	20 ns	40 ns	600 V	Surface Mount	2	Independent	Inverting Non-Inverting
Infineon Technologies IR21834STRPBF	IGBT N-Channel MOSFET	150 °C	-40 °C	20 V	10 VDC	0.8 V 2.7 V		2.3 A	1.9 A	Half-Bridge	14-SOIC	3.9 mm	0.154 in	20 ns	40 ns	600 V	Surface Mount	2	Independent	Inverting Non-Inverting

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.72
		10	$ 2.44
		25	$ 2.11
		100	$ 1.74
		250	$ 1.55
		500	$ 1.44
		1000	$ 1.35
	Digi-Reel®	1	$ 3.72
		10	$ 2.44
		25	$ 2.11
		100	$ 1.74
		250	$ 1.55
		500	$ 1.44
		1000	$ 1.35
	Tape & Reel (TR)	2500	$ 1.25
		5000	$ 1.19
		7500	$ 1.16
Newark	Each (Supplied on Full Reel)	2500	$ 1.28
		5000	$ 1.26
		10000	$ 1.22

Description

General part information

IR21834 Series

600 V Half Bridge Driver IC with typical 1.9 A source and 2.3 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP. For the new version with ourSOI technologywe recommend2ED21834S06J, providing integrated bootstrap diode, better robustness and higher switching frequency