IC GATE DRVR HALF-BRIDGE 14DIP
| Part | Gate Type | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Max] | Voltage - Supply [Min] | Logic Voltage - VIL, VIH | Supplier Device Package | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Driven Configuration | Package / Case | Package / Case [y] | Package / Case [x] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Mounting Type | Number of Drivers | Channel Type | Input Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | IGBT N-Channel MOSFET | 150 °C | -40 °C | 20 V | 10 VDC | 0.8 V 2.7 V | 14-DIP | 2.3 A | 1.9 A | Half-Bridge | 14-DIP | 7.62 mm | 0.3 " | 20 ns | 40 ns | 600 V | Through Hole | 2 | Independent | Inverting Non-Inverting |
Infineon Technologies | IGBT N-Channel MOSFET | 150 °C | -40 °C | 20 V | 10 VDC | 0.8 V 2.7 V | 14-DIP | 2.3 A | 1.9 A | Half-Bridge | 14-DIP | 7.62 mm | 0.3 " | 20 ns | 40 ns | 600 V | Through Hole | 2 | Independent | Inverting Non-Inverting |
Infineon Technologies | IGBT N-Channel MOSFET | 150 °C | -40 °C | 20 V | 10 VDC | 0.8 V 2.7 V | 2.3 A | 1.9 A | Half-Bridge | 14-SOIC | 3.9 mm | 0.154 in | 20 ns | 40 ns | 600 V | Surface Mount | 2 | Independent | Inverting Non-Inverting | |
Infineon Technologies | ||||||||||||||||||||
Infineon Technologies | IGBT N-Channel MOSFET | 150 °C | -40 °C | 20 V | 10 VDC | 0.8 V 2.7 V | 2.3 A | 1.9 A | Half-Bridge | 14-SOIC | 3.9 mm | 0.154 in | 20 ns | 40 ns | 600 V | Surface Mount | 2 | Independent | Inverting Non-Inverting | |
Infineon Technologies | IGBT N-Channel MOSFET | 150 °C | -40 °C | 20 V | 10 VDC | 0.8 V 2.7 V | 2.3 A | 1.9 A | Half-Bridge | 14-SOIC | 3.9 mm | 0.154 in | 20 ns | 40 ns | 600 V | Surface Mount | 2 | Independent | Inverting Non-Inverting |