STB55NF06LT4

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STMicroelectronics

POWER MOSFET, N CHANNEL, 30 V, 55 A, 0.014 OHM, TO-263 (D2PAK), SURFACE MOUNT

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DocumentsProduct Change Notice EN Datasheet

STB55NF06LT4

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 30 V, 55 A, 0.014 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB55NF06LT4

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	37 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	95 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	4.7 V

STB55NF06 Series

N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in D2PAK package

Part	FET Type	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
STMicroelectronics STB55NF06T4	N-Channel	Surface Mount	20 V	-55 °C	175 ░C	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 A	110 W	10 V	60 nC	60 V	1300 pF	MOSFET (Metal Oxide)	4 V	18 mOhm
STMicroelectronics STB55NF06LT4	N-Channel	Surface Mount	16 V	-55 °C	175 ░C	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	55 A	95 W		37 nC	60 V	1700 pF	MOSFET (Metal Oxide)	4.7 V	18 mOhm	10 V	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1000	$ 0.74
		2000	$ 0.69
Digikey	Cut Tape (CT)	1	$ 1.79
		10	$ 1.49
		100	$ 1.18
		500	$ 1.00
	Digi-Reel®	1	$ 1.79
		10	$ 1.49
		100	$ 1.18
		500	$ 1.00
	Tape & Reel (TR)	1000	$ 0.85
		2000	$ 0.81
		5000	$ 0.78
		10000	$ 0.75
Newark	Each (Supplied on Cut Tape)	1	$ 2.58
		10	$ 1.84
		25	$ 1.71
		50	$ 1.57
		100	$ 1.44
		250	$ 1.40
		500	$ 1.22
		1000	$ 1.14

Description

General part information

STB55NF06 Series

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet