STB55NF06 Series

N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in D2PAK package

Catalog

N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in D2PAK package

Part	FET Type	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
STMicroelectronics STB55NF06T4	N-Channel	Surface Mount	20 V	-55 °C	175 ░C	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 A	110 W	10 V	60 nC	60 V	1300 pF	MOSFET (Metal Oxide)	4 V	18 mOhm
STMicroelectronics STB55NF06LT4	N-Channel	Surface Mount	16 V	-55 °C	175 ░C	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	55 A	95 W		37 nC	60 V	1700 pF	MOSFET (Metal Oxide)	4.7 V	18 mOhm	10 V	5 V

Catalog

N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in D2PAK package

Description

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.