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STP42N60M2-EP - TO-220-3

STP42N60M2-EP

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STMicroelectronics

N-CHANNEL 600 V, 0.076 OHM TYP., 34 A MDMESH M2 EP POWER MOSFET IN A TO-220 PACKAGE

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STP42N60M2-EP - TO-220-3

STP42N60M2-EP

Active
STMicroelectronics

N-CHANNEL 600 V, 0.076 OHM TYP., 34 A MDMESH M2 EP POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+27

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP42N60M2-EP
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2370 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs87 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1000$ 2.80
DigikeyTube 1$ 6.26
50$ 4.96
100$ 4.25
500$ 3.78
1000$ 3.24
2000$ 3.05
NewarkEach 1$ 6.36
10$ 6.34
25$ 4.78

Description

General part information

STP42N60M2-EP Series

MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies.