STP42N60M2-EP Series

N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220 package

Catalog

N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220 package

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Operating Temperature	Power Dissipation (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP42N65M5	N-Channel	10 V	33 A	Through Hole	100 nC	4650 pF	TO-220-3	MOSFET (Metal Oxide)	150 °C	190 W	TO-220	650 V	25 V	5 V	79 mOhm
STMicroelectronics STP42N60M2-EP	N-Channel	10 V	34 A	Through Hole			TO-220-3	MOSFET (Metal Oxide)	150 °C	250 W	TO-220	600 V	25 V	4.75 V	87 mOhm	2370 pF	55 nC

Catalog

N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220 package

Description

MDmesh V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies.