IXTA160N04T2

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IXYS

TRANSISTOR: N-MOSFET; UNIPOLAR; 40V; 160A; 250W; TO263; 40NS

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Active

IXYS

TRANSISTOR: N-MOSFET; UNIPOLAR; 40V; 160A; 250W; TO263; 40NS

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA160N04T2

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	79 nC
Input Capacitance (Ciss) (Max) @ Vds	4640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs [Max]	5 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Technology	FET Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
IXYS IXTA160N04T2	-55 °C	175 ░C	4 V	40 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	MOSFET (Metal Oxide)	N-Channel	5 mOhm	250 W	TO-263AA	10 V	79 nC	4640 pF	160 A
IXYS IXTA160N085T	-55 °C	175 ░C		85 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	MOSFET (Metal Oxide)	N-Channel			TO-263AA	10 V		6400 pF	160 A	6 mOhm	164 nC	360 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.20
TME	N/A	1	$ 16.42
		3	$ 15.44

General part information

N-Channel 40 V 160A (Tc) 250W (Tc) Surface Mount TO-263AA

Technical documentation and resources

No documents available