IXTA160N085T

Obsolete

IXYS

MOSFET N-CH 85V 160A TO263

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Obsolete

IXYS

MOSFET N-CH 85V 160A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA160N085T

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	164 nC
Input Capacitance (Ciss) (Max) @ Vds	6400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Technology	FET Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
IXYS IXTA160N04T2	-55 °C	175 ░C	4 V	40 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	MOSFET (Metal Oxide)	N-Channel	5 mOhm	250 W	TO-263AA	10 V	79 nC	4640 pF	160 A
IXYS IXTA160N085T	-55 °C	175 ░C		85 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	MOSFET (Metal Oxide)	N-Channel			TO-263AA	10 V		6400 pF	160 A	6 mOhm	164 nC	360 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 160A (Tc) 360W (Tc) Surface Mount TO-263AA

Technical documentation and resources

No documents available